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RU1E002SP
Fig.7 Forward Transfer Admittance vs. Drain Current
1
V DS = - 10V
pulsed
　
1
Data Sheet
Fig.8 Typical Transfer Characteristics
V DS = - 10V
pulsed
0.1
T a =125 ° C
T a =75 ° C
T a =25 ° C
T a = - 25 ° C
0.1
0.01
T a =125 ° C
T a =75 ° C
T a =25 ° C
T a = - 25 ° C
0.01
0.001
0.01
0.1
1
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
Drain Current : - I D [A]
Fig.9 Source Current vs. Source-Drain Voltage
V GS =0V
pulsed
Gate-Source Voltage : - V GS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
5000
T a =25 ° C
pulsed
4000
I D = - 0.15A
0.1
3000
I D = - 0.25A
T a =125 ° C
T a =75 ° C
T a =25 ° C
T a = - 25 ° C
2000
1000
0.01
0.0
0.5
1.0
1.5
2.0
0
0
2
4
6
8
10
1000
Source-Drain Voltage : -V SD [V]
Fig.11 Switching Characteristics
1000
Gate-Source Voltage : - V GS [V]
Fig.12 Typical Capacitance vs. Drain-Source Voltage
100
10
t f
t d(off)
V DD ≒ - 15V
V GS = - 10V
R G =10Ω
T a =25 ° C
Pulsed
100
10
T a =25 ° C
f=1MHz
V GS =0V
C iss
C oss
t d(on)
t r
C rss
1
0.01
0.1
1
1
0.01
0.1
1
10
100
Drain Current : - I D [A]
Drain-Source Voltage : - V DS [V]
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4/5
2011.08 - Rev.A
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